IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
™
"%&$!"# 2 Power-Transistor
Product Summary
Features
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Type
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Package
F>%JE*.+%+
F>%JE*.*%+
F>%JE**(%+
Marking
(-9D)(D
(-9D)(D
(-9D)(D
Maximum ratings, 2 ET W U F?=6DD @ E96CH:D6 DA64:7:65
Parameter
Symbol Conditions
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:?F@ FD 5C
2 :? 4FCC6?E
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Value
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Unit
7
ZA
XK's`
r*(
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U
A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
(&-
>:?:>2 =7@ @ EAC:?E
4> * 4@ @ =:?8 2 C62 -#
%
%
,(
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%
%
Thermal characteristics
.96C>2 =C6D:DE2 ?46 ;
F?4E:@ ? 42 D6
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R aUA7
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B'L
Electrical characteristics, 2 ET W U F?=6DD @ E96CH:D6 DA64:7:65
Static characteristics
C2 :? D@ FC46 3 C62 I"aU#
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Reverse Diode
:@ 56 4@ ?E:?@ FD 7@ CH2 C5 4FCC
6?E
II
:@ 56 AF=D6 4FCC
6?E
I I$]bY`R
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6
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A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
1 Power dissipation
2 Drain current
P a\a5S"T 9#
I ;5S"T 9 V >I"
/
350
120
300
100
250
200
I D [A]
P tot [W]
80
60
150
40
100
20
50
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I ;5S"V ;I T 9 U D 5(
Z aUA95S"t ]#
A2 C2 >6E6C t ]
A2 C2 >6E6C
D 5t ]'T
103
100
=:>:E65 3 J @ ? DE2 E
6
_R`V`aN[PR
WD
WD
(&-
WD
10-1
I D [A]
>D
>D
;9
101
(&()
D:?8=6 AF=D6
10-3
-1
10
0
10
1
10
2
10
3
V DS [V]
, 6G
(&((&(*
10-2
100
10
(&*
(&)
Z thJC [K/W]
102
10-5
10-4
10-3
10-2
10-1
100
t p [s]
A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I ;5S"V ;I T W U
R ;I"\[#5S"I ; T W U
A2 C
2 >6E6C V >I
A2 C2 >6E6C
V >I
400
15
/
/
/
/
320
12
240
R DS(on) [m ]
/
I D [A]
/
160
9
/
/
6
/
/
/
80
3
/
/
0
0
0
1
2
3
4
5
0
50
V DS [V]
100
150
100
150
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I ;5S"V >I L
V ;Ih6*hI ;hR ;I"\[#ZNe
g S`5S"I ; T W U
A2 C
2 >6E6C T W
300
200
250
160
200
g fs [S]
I D [A]
120
150
80
100
U
U
40
50
0
0
0
2
4
6
8
, 6G
0
50
I D [A]
V GS [V]
A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R ;I"\[#5S"T W I ;
V >I
/
V >I"aU#5S"T W V >I5V ;I
A2 C2 >6E6C
I;
12
4
3.5
10
W
3
W
2.5
V GS(th) [V]
R DS(on) [m ]
8
6
2
af]
1.5
4
1
2
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 5S"V ;I V >I / f
' # K
I =5S"V I;#
A2 C2 >6E6C
TW
105
103
104
U
9V``
10
U
10
I F [A]
C [pF]
9\``
U
2
3
U
9_``
101
102
10
1
10
0
20
40
60
80
V DS [V]
, 6G
0
0
0.5
1
1.5
2
V SD [V]
A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
13 Avalanche characteristics
14 Typ. gate charge
I 7I5S"t 7K R >I "
V >I5S"Q TNaR I ;
AF=D65
A2 C
2 >6E6C T W"`aN_a#
A2 C2 >6E6C
V ;;
1000
12
10
/
100
8
/
I AS [A]
V GS [V]
U
U
U
10
/
6
4
2
1
0
1
10
100
1000
0
50
100
150
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 8H";II#5S"T W I ;
>
115
V >I
Qg
V BR(DSS) [V]
110
105
V T `"aU#
100
95
Q T "aU#
Q `d
Q T`
90
-60
-20
20
60
100
140
Q g ate
Q TQ
180
T j [°C]
, 6G
A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
PG-TO220-3: Outline
, 6G
A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
PG-TO262-3-1 (I²PAK)
, 6G
A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
PG-TO-263 (D²-Pak)
, 6G
A2 86
IPB05CN10N G
IPI05CN10N G
IPP05CN10N G
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A2 86